Integrated circuits are put into protective packages to allow easy handling and assembly onto printed circuit boards and to protect the devices from damage.
Three pin diode.
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Pin diodes are available at mouser electronics from industry leading manufacturers mouser is an authorized distributor for many pin diode manufacturers including broadcom infineon m a com nxp skyworks more.
The high resistive layer of the intrinsic region provides the large electric field between the p and n region.
A pin diode is a diode with a wide undoped intrinsic semiconductor region between a p type semiconductor and an n type semiconductor region.
The pin diode comprises a semiconductor diode having three layers naming p type layer intrinsic layer and n type layer as shown in the figure below.
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The p and n regions are there and the region between them consists of the intrinsic material and the doping level is said to be very low in this region.
A very large number of different types of package exist.
The occurrence of an intrinsic layer can significantly increase the breakdown voltage for the application of high voltage.
The p type and n type regions are typically heavily doped because they are used for ohmic contacts.
A standard sized 8 pin dual in line package dip containing a 555 ic.
Solid state inc mr756 standard diode 6a 600v used.
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The wide intrinsic region is in contrast to an ordinary p n diode the wide intrinsic region makes the pin diode an inferior rectifier one typical.
Sot 23 3 pin diodes are available at mouser electronics.
The electric field induces because of the movement of the holes and the electrons.
This is a fairly common practice in the industry.
Used in voltage protection circuits.
The pin diode is an alteration of the pn junction for particular applications.
The diode in which the intrinsic layer of high resistivity is sandwiched between the p and n region of semiconductor material such type of diode is known as the pin diode.
I don t have a solid answer as to why they do this but will share a few possibilities for debate.
After the pn junction diode was developed in the year 1940s the diode was first exercised as a high power rectifier low frequency during the year 1952.
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